The 2EDF8275FXUMA1 is a dual-channel galvanic isolated gate driver IC designed to drive Si MOSFETs, SiC MOSFETs, and GaN power switches. It is housed in a 150mil DSO-16 package and features 5 A source and 9 A sink output current, 150 V/ns common-mode transient immunity, and a propagation delay of 38 ns typ. with 6 ns channel-to-channel mismatch. It includes under voltage lockout at 8 V, open-drain enable/disable control, and functional isolation rated at 1.5 kV DC. The device supports high-side + low-side, high-side + high-side, or low-side + low-side configurations and meets UL 1577 and IEC 60747-17 standards.
Half Bridge Based MOSFET Driver
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2EDF8275FXUMA1 |
| Package Type | PG-DSO-16 |
