Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm package that saves real estate of already space-constrained handheld radios.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
0.03-3.0GHZ,10W,32V GAN RF I/P-M
0.03-3.0GHZ,10W,32V GAN RF I/P-M
0.03-3.0GHZ,10W,32V GAN RF I/P-M
RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
| Qorvo | DigiKey | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | Transistors |
| Product Number | TGF3015-SM | 2312-TGF3015-SMDKR-ND | TGF3015-SM |
| Product Name | 0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor | RF FETs, MOSFETs | RF JFET Transistors |
| Transistor Technology / Material | 0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor | ||
| Transistor Grade / Operating Range | Military | ||
| Package Type | QFN | 16-VFQFN Exposed Pad |
