Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE 2SA1208S-AE

The 2SA1208 is a PNP silicon transistor designed for high-voltage switching and audio predriver applications, featuring a collector-to-base voltage rating of 180 V and a collector-to-emitter voltage rating of 160 V, with a maximum collector current of 70 mA and power dissipation of 900 mW. It is packaged in a 3-pin case with dimensions of 6.0 mm × 5.0 mm × 1.45 mm, suitable for through-hole mounting. The device exhibits a DC current gain (hFE) range of 100 to 400 depending on grade, a gain-bandwidth product of 150 MHz, and switching times of 0.1 μs turn-on and 0.2 μs fall time. It meets operating temperature limits from -55°C to 150°C and is classified under the FBET process for improved linearity and low output capacitance. This part is part of a series with grade variants designated R, S, and T based on hFE binning.