Qorvo DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor T2G4003532-FL

Description
Qorvo's T2G4003532-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 32V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
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Description
Qorvo's T2G4003532-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 32V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.
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Suppliers

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DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor - T2G4003532-FL - Qorvo
Greensboro, NC, United States
DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor
T2G4003532-FL
DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor T2G4003532-FL
Qorvo's T2G4003532-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 32V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo's T2G4003532-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 32V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
T2G4003532-FL
RF JFET Transistors T2G4003532-FL
RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN

RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN

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Technical Specifications

  Qorvo VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number T2G4003532-FL T2G4003532-FL
Product Name DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor RF JFET Transistors
Transistor Technology / Material GaN
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