The AIMZA75R090M1H is a 750 V silicon carbide MOSFET designed for automotive applications requiring high efficiency and reliability in hard and soft switching topologies. It is packaged in a PG-TO247-4 case with a driver source pin for improved gate control. The device has a typical on-state resistance of 90 mΩ and a maximum continuous drain current of 21 A at 150 °C. It is rated for a maximum junction temperature of 175 °C and has been 100% avalanche tested with a single-pulse avalanche energy tolerance of 75 mJ. The part is qualified according to AEC-Q101 and supports higher switching frequencies with reduced switching losses.
The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | AIMZA75R090M1H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZA75R090M1H |
| Polarity | N-Channel; N |
