Qorvo Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs UF3C120400K3S

Description
Win Source Part Number: 1351306-UF3C120400K3 S Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 30 Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 100W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Qorvo Base Product Number: UF3C120400 Drive Voltage (Max Rds On, Min Rds On): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
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Description
Win Source Part Number: 1351306-UF3C120400K3 S Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 30 Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 100W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Qorvo Base Product Number: UF3C120400 Drive Voltage (Max Rds On, Min Rds On): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1351306-UF3C120400K3S - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1351306-UF3C120400K3S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1351306-UF3C120400K3S
Win Source Part Number: 1351306-UF3C120400K3 S Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 30 Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Power Dissipation (Max): 100W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Qorvo Base Product Number: UF3C120400 Drive Voltage (Max Rds On, Min Rds On): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V

Win Source Part Number: 1351306-UF3C120400K3S
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tube
Standard Package: 30
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 100W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Qorvo
Base Product Number: UF3C120400
Drive Voltage (Max Rds On, Min Rds On): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Vgs(th) (Max) @ Id: 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3C120400K3S - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UF3C120400K3S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UF3C120400K3S
SICFET N-CH 1200V 7.6A TO247-3

SICFET N-CH 1200V 7.6A TO247-3

Supplier's Site
Sic Schottky Diode, 1.2Kv, 7.6A, To-247 Rohs Compliant Unitedsic - 47AK1762 - Newark, An Avnet Company
Chicago, IL, United States
Sic Schottky Diode, 1.2Kv, 7.6A, To-247 Rohs Compliant Unitedsic
47AK1762
Sic Schottky Diode, 1.2Kv, 7.6A, To-247 Rohs Compliant Unitedsic 47AK1762
SIC SCHOTTKY DIODE, 1.2KV, 7.6A, TO-247 ROHS COMPLIANT: YES

SIC SCHOTTKY DIODE, 1.2KV, 7.6A, TO-247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category Transistors RF Transistors Transistors
Product Number 1351306-UF3C120400K3S UF3C120400K3S 47AK1762
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Sic Schottky Diode, 1.2Kv, 7.6A, To-247 Rohs Compliant Unitedsic
Polarity N-Channel
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