Qorvo 1200 V, 410 mohm SiC FET UF3C120400K3S

Qorvo's UF3C120400K3S 1200 V, 410 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

SICFET N-CH 1200V 7.6A TO247-3

Win Source Part Number: 1351306-UF3C120400K3S
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tube
Standard Package: 30
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 100W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Qorvo
Base Product Number: UF3C120400
Drive Voltage (Max Rds On, Min Rds On): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Vgs(th) (Max) @ Id: 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V

N-Channel 1200V 7.6A (Tc) 100W (Tc) Through Hole TO-247-3