The 2N5401RLRMG is a PNP silicon bipolar transistor in a TO-92 case with through-hole mounting, packaged in tape and ammo box format with 2000 units per package. It has a collector-emitter voltage rating of 150 Vdc, a continuous collector current of 600 mAdc, and a power dissipation of 625 mW at 25°C. The junction temperature range is -55°C to +150°C. It features a DC current gain (hFE) of 50 to 240 at IC = 10 mA and VCE = 5 V, with a collector-emitter saturation voltage of ≤0.5 V at IC = 50 mA and IB = 5 mA. The collector-base breakdown voltage is 160 Vdc. Thermal resistance junction-to-ambient is 200°C/W. The part is Pb-free and RoHS compliant.
Manufacturer: ON Semiconductor
Win Source Part Number: 906274-2N5401RLRMG
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Bipolar (BJT) Transistor PNP 150 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)
Package: Bulk
Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-92 (TO-226)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 2000
HTSUS: 8541.21.0075
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 906274-2N5401RLRMG |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - 2N5401RLRMG |
| Polarity | PNP |
