Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP24N60CFD SPP24N60CFD

Description
Manufacturer: Infineon Technologies Win Source Part Number: 065964-SPP24N60CFD Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 240W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 21.7A (Tc) Gate-Source Threshold Voltage: 5V @ 1.2mA Max Gate Charge: 143nC @ 10V Max Input Capacitance: 3160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 185 mOhm @ 15.4A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 065964-SPP24N60CFD Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 240W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 21.7A (Tc) Gate-Source Threshold Voltage: 5V @ 1.2mA Max Gate Charge: 143nC @ 10V Max Input Capacitance: 3160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 185 mOhm @ 15.4A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP24N60CFD - 065964-SPP24N60CFD - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP24N60CFD
065964-SPP24N60CFD
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP24N60CFD 065964-SPP24N60CFD
Manufacturer: Infineon Technologies Win Source Part Number: 065964-SPP24N60CFD Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 240W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 21.7A (Tc) Gate-Source Threshold Voltage: 5V @ 1.2mA Max Gate Charge: 143nC @ 10V Max Input Capacitance: 3160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 185 mOhm @ 15.4A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 065964-SPP24N60CFD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 240W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 21.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 1.2mA
Max Gate Charge: 143nC @ 10V
Max Input Capacitance: 3160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 185 mOhm @ 15.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 065964-SPP24N60CFD
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP24N60CFD
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 240000 milliwatts
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