ALD110908PAL is a dual N-channel enhancement mode MOSFET array with precision matching, designed for low-voltage analog applications such as current mirrors and differential amplifiers. It is housed in an 8-pin plastic DIP package measuring 9.40 to 11.68 mm in length and 5.59 to 7.11 mm in width. The device has a drain-source voltage rating of 10.6 V, a maximum power dissipation of 500 mW, and operates within a temperature range of 0°C to +70°C. Gate threshold voltage is specified at 0.80 V with a match within 10 mV between devices. It features a typical input impedance of 10¹² Ω, gate leakage current of 3 pA at 25°C, and low input capacitance of 2.5 pF. It meets RoHS compliance as indicated by the "L" suffix in the ordering code.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110908PAL | 1014-1040-ND | ALD110908PAL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
