Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs AUIRF2805

MOSFET N-CH 55V 75A TO220AB

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 175 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 4.7 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-220AB
Mounting Type = Through Hole
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 175 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 4.7 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-220AB
Mounting Type = Through Hole
Pin Count = 3

AUTOMOTIVE HEXFET N CHANNEL

Manufacturer: Infineon Technologies
Win Source Part Number: 1020706-AUIRF2805
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 230nC @ 10V
Max Input Capacitance: 5110pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 104A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

AUIRF2805 - 55V-60V N-Channel Automotive MOSFET

AUIRF2805 - 55V-60V N-Channel Automotive MOSFET

N-Channel 55V 75A (Tc) 330W (Tc) Through Hole TO-220AB