Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3303STRR IRL3303STRR

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047457-IRL3303STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 38A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 26nC @ 4.5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047457-IRL3303STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 38A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 26nC @ 4.5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3303STRR - 1047457-IRL3303STRR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3303STRR
1047457-IRL3303STRR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3303STRR 1047457-IRL3303STRR
Manufacturer: Infineon Technologies Win Source Part Number: 1047457-IRL3303STRR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 38A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 26nC @ 4.5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047457-IRL3303STRR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 26nC @ 4.5V
Max Input Capacitance: 870pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 26 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 38A MOSFET Transistor
285-IRL3303STRR
30V 38A MOSFET Transistor 285-IRL3303STRR
MOSFET N-CH 30V 38A D2PAK Product overview: IRL3303STRR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 38A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRL3303STRR can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 38A D2PAK Product overview: IRL3303STRR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 38A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRL3303STRR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047457-IRL3303STRR 285-IRL3303STRR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3303STRR 30V 38A MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 3800 to 68000 milliwatts 3800 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD910028SALI - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
3 suppliers
60 V, N-channel Trench MOSFET - BSN20BKR - Nexperia B.V.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
View Details
9 suppliers
 - LM5100BMA/NOPB - Rochester Electronics
Texas Instruments
Specs
Package Type SOIC8
Packing Method Tube; Tube
View Details