Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1133(0)-T1B-A 2SK1133(0)-T1B-A

The 2SK1133 is an N-channel MOSFET designed for high-speed switching applications, directly drivable by 5 V IC outputs. It features high input impedance, eliminating the need for driving current or bias resistors, and is suitable for complementary use with the 2SJ166. Housed in an SC-59 (Mini Mold) package measuring 2.8 mm × 1.5 mm, it has a drain-source voltage rating of 50 V, a continuous drain current of ±100 mA, and a total power dissipation of 200 mW. The gate-source voltage is limited to ±7.0 V, and the channel temperature maximum is 150 °C. The device includes an integrated gate-source ESD protection diode. It is classified as "Standard" quality for commercial applications.