Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3711PBF IRFR3711PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 094297-IRFR3711PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 2980pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 15A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 094297-IRFR3711PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 2980pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 15A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3711PBF - 094297-IRFR3711PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3711PBF
094297-IRFR3711PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3711PBF 094297-IRFR3711PBF
Manufacturer: Infineon Technologies Win Source Part Number: 094297-IRFR3711PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 44nC @ 4.5V Max Input Capacitance: 2980pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 15A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 094297-IRFR3711PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 44nC @ 4.5V
Max Input Capacitance: 2980pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 15A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 094297-IRFR3711PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3711PBF
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 2500 to 120000 milliwatts
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