Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3711PBF IRFR3711PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 094297-IRFR3711PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 44nC @ 4.5V
Max Input Capacitance: 2980pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 15A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 100A DPAK Product overview: IRFR3711PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 100A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 100A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFR3711PBF can be used for catalog matching and distributor lookup.