Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFM360 IRFM360

Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065566-IRFM360 Drain to Source Voltage (Vdss): 400 V Number of Elements: 1 Power Dissipation: 250 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRF360; IRFP360PBF; FDP26N40; SIHP25N40D-GE3; FDP24N40; SIHP25N50E-GE3IRFM36 0.; Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Contains Lead Mount: Through Hole RoHS: Non-Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: No SVHC Max Power Dissipation: 250 W Continuous Drain Current (ID): 14 A Drain to Source Breakdown Voltage: 400 V Drain to Source Resistance: 200 mΩ Gate to Source Voltage (Vgs): 20 V Nominal Vgs: 4 V On-State Resistance: 200 mΩ