The IRFI530NPbF is a fifth-generation HEXFET® N-channel power MOSFET in a TO-220 Full-Pak package, designed for high-voltage isolated applications. It features a drain-source breakdown voltage of 100 V, a continuous drain current of 12 A at 25°C, and a maximum on-resistance of 0.11 Ω at V<sub>GS</sub> = 10 V. The device is fully avalanche rated with a single-pulse avalanche energy of 150 mJ and has a gate-source voltage rating of ±20 V. It is lead-free, RoHS compliant, and has a thermal resistance from junction to case of 3.7 °C/W. The TO-220 Full-Pak integrates isolation equivalent to a 100-micron mica barrier, eliminating the need for external insulators. The package is not recommended for surface mount applications.
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:33W; No. of Pins:3Pins; MSL:-RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 27AC6789 |
| Product Name | Channel Type Infineon |
| Package Type | TO-3 |
