The ALD110904PAL is a dual N-channel enhancement mode MOSFET array in an 8-pin plastic DIP package, designed for precision low-voltage analog applications requiring matched characteristics and sub-threshold operation. It features a gate threshold voltage of +0.40V with a match of ±10mV, input impedance of 10¹² Ω typical, and gate leakage current of 200pA maximum at 25°C. The devices support operation from 0°C to +70°C, with drain-source voltage rating of 10.6V and power dissipation of 500mW. The package dimensions are standardized for through-hole mounting, with a body width of 7.62 to 8.26mm and lead pitch of 2.29 to 2.79mm. The part meets RoHS standards and is built using EPAD® CMOS technology for enhanced parametric matching and temperature tracking.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110904PAL | 1014-1036-ND | ALD110904PAL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
