Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002L6327 2N7002L6327

Manufacturer: Infineon Technologies Win Source Part Number: 197476-2N7002L6327 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: 2N7002 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 300mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.6nC @ 10V Max Input Capacitance: 20pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): 2N7002K; NX7002BKR; RK7002BMT116; 2N7002K,215; Introduction Date: February 11, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient