MOSFET N-CH 100V 5.7A DIRECTFET Product overview: IRF6645TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6645TRPBF can be used for catalog matching and distributor lookup.
N-Channel 100V 5.7A (Ta), 25A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SJ
N-Channel 100V 5.7A (Ta), 25A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SJ
N-Channel 100V 5.7A (Ta), 25A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SJ
Manufacturer: Infineon Technologies
Win Source Part Number: 1046559-IRF6645TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET SJ
Dimension: DirectFET Isometric SJ
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.7A (Ta), 25A (Tc)
Gate-Source Threshold Voltage: 4.9V @ 50μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 890pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 5.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
MOSFET, N-CH, 100V, 25A, 150DEG C, 42W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.9V RoHS Compliant: Yes
IRF6645 - 12V-300V N-CHANNEL POW
MOSFET N-CH 100V 5.7A DIRECTFET
MOSFET N-CH 100V 5.7A DIRECTFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF6645TRPBF | IRF6645TRPBFTR-ND | 2144455P | 2144455 | 1046559-IRF6645TRPBF | 13AC9183 | IRF6645TRPBF | IRF6645TRPBF |
| Product Name | 100V 5.7A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6645TRPBF | Mosfet, N-Ch, 100V, 25A, 150Deg C, 42W; Channel Type Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 42 milliwatts | 2200 to 42000 milliwatts | 2200 milliwatts | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
