The IRF4905PbF is a P-channel HEXFET power MOSFET designed for high-efficiency switching applications. It is packaged in a TO-220AB case with a maximum continuous drain current of -74A at 25°C and an on-resistance of 0.02Ω at -10V gate-source voltage. The device supports a drain-source voltage of -55V, operates at junction temperatures up to 175°C, and is fully avalanche rated with a single pulse avalanche energy of 930 mJ. It features a dynamic dv/dt rating of -5.0 V/ns and includes an integrated body diode with a forward voltage of -1.6V at -38A. The gate threshold voltage ranges from -2.0V to -4.0V, and total gate charge is up to 180 nC.
P CHANNEL MOSFET, -55V, 74A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:74A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC0586 |
| Product Name | P Channel Mosfet, -55V, 74A, To-220Ab; Channel Type Infineon |
| Polarity | P-Channel |
