Nexperia B.V. TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK6212-40C,118 BUK6212-40C,118

Description
50A, 40V, 0.02ohm, N-Channel Power MOSFET, TO-252
Request a Quote Datasheet
Description
50A, 40V, 0.02ohm, N-Channel Power MOSFET, TO-252
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BUK6212-40C,118 - Rochester Electronics
Newburyport, MA, United States
50A, 40V, 0.02ohm, N-Channel Power MOSFET, TO-252

50A, 40V, 0.02ohm, N-Channel Power MOSFET, TO-252

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK6212-40C,118 - 1025145-BUK6212-40C,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK6212-40C,118
1025145-BUK6212-40C,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK6212-40C,118 1025145-BUK6212-40C,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1025145-BUK6212-40C, 118 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.8V @ 1mA Max Gate Charge: 33.9nC @ 10V Max Input Capacitance: 1900pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 11.2 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025145-BUK6212-40C,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 1mA
Max Gate Charge: 33.9nC @ 10V
Max Input Capacitance: 1900pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 11.2 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 1727-5505-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-5505-2-ND
Single FETs, MOSFETs 1727-5505-2-ND
N-Channel 40V 50A (Tc) 80W (Tc) Surface Mount DPAK

N-Channel 40V 50A (Tc) 80W (Tc) Surface Mount DPAK

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BUK6212-40C,118 1025145-BUK6212-40C,118 1727-5505-2-ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK6212-40C,118 Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
rDS(on) 0.0200 ohms
Package Type SOT428 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR
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