Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPDQ60R022S7

Description
The 600V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The top side cooling minimizes conduction losses and maximizes power density, with the most efficient SMD cooling. Summary of Features Low RDS(on) Compact top-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Lower TCO cost or BOM cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning Applications Light electric vehicles (LEV)
  • 500V-950V N-Channel Power MOSFET - IPDQ60R022S7 - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
The 600V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The top side cooling minimizes conduction losses and maximizes power density, with the most efficient SMD cooling. Summary of Features Low RDS(on) Compact top-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Lower TCO cost or BOM cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning Applications Light electric vehicles (LEV)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IPDQ60R022S7 is a 600V CoolMOS™ S7 silicon carbide power MOSFET designed for low-frequency switching applications such as solid-state relays, circuit breakers, and line rectification in SMPS and inverter topologies. It is housed in a PG-HDSOP-22-1 package with top-side cooling, measuring 15.30-15.50 mm in length, 14.90-15.10 mm in width, and 2.20-2.35 mm in height. The device features a maximum on-state resistance of 22 mΩ at 25°C, a pulsed drain current capability of 375 A, and a Kelvin source pin to improve high-current switching performance. Thermal resistance from junction to case is 0.3°C/W, and junction-to-ambient is 62°C/W on a minimal footprint PCB. It is fully qualified according to JEDEC for industrial applications and meets the AEC-Q200 standard. The package supports a maximum operating junction temperature of 150°C and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

The IPDQ60R022S7 is a 600V CoolMOS™ S7 silicon carbide power MOSFET designed for low-frequency switching applications such as solid-state relays, circuit breakers, and line rectification in SMPS and inverter topologies. It is housed in a PG-HDSOP-22-1 package with top-side cooling, measuring 15.30-15.50 mm in length, 14.90-15.10 mm in width, and 2.20-2.35 mm in height. The device features a maximum on-state resistance of 22 mΩ at 25°C, a pulsed drain current capability of 375 A, and a Kelvin source pin to improve high-current switching performance. Thermal resistance from junction to case is 0.3°C/W, and junction-to-ambient is 62°C/W on a minimal footprint PCB. It is fully qualified according to JEDEC for industrial applications and meets the AEC-Q200 standard. The package supports a maximum operating junction temperature of 150°C and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPDQ60R022S7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPDQ60R022S7
500V-950V N-Channel Power MOSFET IPDQ60R022S7
The 600V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The top side cooling minimizes conduction losses and maximizes power density, with the most efficient SMD cooling. Summary of Features Low RDS(on) Compact top-side-cooled QDPAK package Optimized for conduction performance Improved thermal resistance High pulse current capability Kelvin-source pin improves switching performance at high current Benefits Minimizes conduction losses Increases energy efficiency More compact and easier designs Eliminates or reduces heat sinks in solid-state design Lower TCO cost or BOM cost Potential Applications SMPS Solar energy systems Battery and equipment protection Solid state relays (SSR) and solid state circuit breakers (SSCB) Indoor commercial lighting control UPS Low speed electric vehicles (LSEV) Programmable logic controllers (PLC) Room air conditioning Applications Light electric vehicles (LEV)

The 600V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The top side cooling minimizes conduction losses and maximizes power density, with the most efficient SMD cooling.


Summary of Features

  • Low RDS(on)
  • Compact top-side-cooled QDPAK package
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability
  • Kelvin-source pin improves switching performance at high current

Benefits

  • Minimizes conduction losses
  • Increases energy efficiency
  • More compact and easier designs
  • Eliminates or reduces heat sinks in solid-state design
  • Lower TCO cost or BOM cost

Potential Applications

  • SMPS
  • Solar energy systems
  • Battery and equipment protection
  • Solid state relays (SSR) and solid state circuit breakers (SSCB)
  • Indoor commercial lighting control
  • UPS
  • Low speed electric vehicles (LSEV)
  • Programmable logic controllers (PLC)
  • Room air conditioning

Applications

  • Light electric vehicles (LEV)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPDQ60R022S7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0220 ohms
QG 150 nC
Unlock Full Specs
to access all available technical data