With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).
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Manufacturer: Infineon Technologies
Win Source Part Number: 1154660-BSC014NE2LSI
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on)
Channel Type = N
Maximum Continuous Drain Current = 100 A
Maximum Drain Source Voltage = 25 V
Maximum Drain Source Resistance = 2 mOhms
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TDSON
Mounting Type = Surface Mount
Transistor Configuration = Single
Pin Count = 8
Channel Mode = Enhancement
Delivery on production packaging - Reel. This product is non-returnable.
OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on)
Channel Type = N
Maximum Continuous Drain Current = 100 A
Maximum Drain Source Voltage = 25 V
Maximum Drain Source Resistance = 2 mOhms
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TDSON
Mounting Type = Surface Mount
Transistor Configuration = Single
Pin Count = 8
Channel Mode = Enhancement
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
| Infineon Technologies AG | Win Source Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC014NE2LSI | 1154660-BSC014NE2LSI | 9064299P | BSC014NE2LSI |
| Product Name | N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC014NE2LSI | MOSFET | |
| Polarity | N-Channel; N | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.0014 ohms | 0.0020 ohms | ||
| TJ | -55 to 150 C (-67 to 302 F) |
