Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPD60R2K1CEAUMA1

Description
Win Source Part Number: 970978-IPD60R2K1CEAU MA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ CE Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 38W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IPD60R2K1CEAUMA1CT,I PD60R2K1CEAUMA1DKR,I PD60R2K1CEAUMA1TR,IP D60R2K1CEAUMA1-ND,SP 001396904 Base Product Number: IPD60R2 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet
Description
Win Source Part Number: 970978-IPD60R2K1CEAU MA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ CE Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 38W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IPD60R2K1CEAUMA1CT,I PD60R2K1CEAUMA1DKR,I PD60R2K1CEAUMA1TR,IP D60R2K1CEAUMA1-ND,SP 001396904 Base Product Number: IPD60R2 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 970978-IPD60R2K1CEAUMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
970978-IPD60R2K1CEAUMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 970978-IPD60R2K1CEAUMA1
Win Source Part Number: 970978-IPD60R2K1CEAU MA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ CE Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 38W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IPD60R2K1CEAUMA1CT,I PD60R2K1CEAUMA1DKR,I PD60R2K1CEAUMA1TR,IP D60R2K1CEAUMA1-ND,SP 001396904 Base Product Number: IPD60R2 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 970978-IPD60R2K1CEAUMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™ CE
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 38W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPD60R2K1CEAUMA1CT,IPD60R2K1CEAUMA1DKR,IPD60R2K1CEAUMA1TR,IPD60R2K1CEAUMA1-ND,SP001396904
Base Product Number: IPD60R2
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IPD60R2K1CEAUMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD60R2K1CEAUMA1DKR-ND
Single FETs, MOSFETs IPD60R2K1CEAUMA1DKR-ND
N-Channel 600V 2.3A (Tc) 38W (Tc) Surface Mount PG-TO252-3

N-Channel 600V 2.3A (Tc) 38W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - IPD60R2K1CEAUMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD60R2K1CEAUMA1CT-ND
Single FETs, MOSFETs IPD60R2K1CEAUMA1CT-ND
N-Channel 600V 2.3A (Tc) 38W (Tc) Surface Mount PG-TO252-3

N-Channel 600V 2.3A (Tc) 38W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - IPD60R2K1CEAUMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD60R2K1CEAUMA1TR-ND
Single FETs, MOSFETs IPD60R2K1CEAUMA1TR-ND
N-Channel 600V 2.3A (Tc) 38W (Tc) Surface Mount PG-TO252-3

N-Channel 600V 2.3A (Tc) 38W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
 - IPD60R2K1CEAUMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Supplier's Site Datasheet
MOSFETs - 2605137 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605137
MOSFETs 2605137
Infineon MOSFET IPD60R2K1CE

Infineon MOSFET IPD60R2K1CE

Supplier's Site
MOSFETs - 2605138 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605138
MOSFETs 2605138
Infineon MOSFET IPD60R2K1CE

Infineon MOSFET IPD60R2K1CE

Supplier's Site
MOSFETs - 2605138P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2605138P
MOSFETs 2605138P
Infineon MOSFET IPD60R2K1CE

Infineon MOSFET IPD60R2K1CE

Supplier's Site
Singapore, Singapore
600V 2.3A TO252 MOSFET Transistor
278-IPD60R2K1CEAUMA1
600V 2.3A TO252 MOSFET Transistor 278-IPD60R2K1CEAUMA1
MOSFET N-CH 600V 2.3A TO252-3 Product overview: IPD60R2K1CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R2K1CEAUMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 2.3A TO252-3 Product overview: IPD60R2K1CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R2K1CEAUMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET CONSUMER

MOSFET CONSUMER

Buy Now Datasheet
MOSFET N-CH 600V 2.3A TO-252-3 - 376-IPD60R2K1CEAUMA1 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 2.3A TO-252-3
376-IPD60R2K1CEAUMA1
MOSFET N-CH 600V 2.3A TO-252-3 376-IPD60R2K1CEAUMA1
MOSFET N-CH 600V 2.3A TO-252-3

MOSFET N-CH 600V 2.3A TO-252-3

Supplier's Site
Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity Infineon - 34AC1677 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity Infineon
34AC1677
Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity Infineon 34AC1677
MOSFET, N-CH, 600V, 3.7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 600V, 3.7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD60R2K1CEAUMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD60R2K1CEAUMA1
Single FETs, MOSFETs IPD60R2K1CEAUMA1
MOSFET N-CH 600V 2.3A TO252-3

MOSFET N-CH 600V 2.3A TO252-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD60R2K1CEAUMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD60R2K1CEAUMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD60R2K1CEAUMA1
MOSFET N-CH 600V 2.3A TO252-3

MOSFET N-CH 600V 2.3A TO252-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics RS Components, Ltd. ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 970978-IPD60R2K1CEAUMA1 IPD60R2K1CEAUMA1DKR-ND IPD60R2K1CEAUMA1 2605137 278-IPD60R2K1CEAUMA1 IPD60R2K1CEAUMA1 376-IPD60R2K1CEAUMA1 34AC1677 IPD60R2K1CEAUMA1 IPD60R2K1CEAUMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFETs 600V 2.3A TO252 MOSFET Transistor MOSFET MOSFET N-CH 600V 2.3A TO-252-3 Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity Infineon Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
PD 38000 milliwatts 38 milliwatts 38000 milliwatts 38000 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type SOT3 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 PG-TO252-3 TO-252 (DPAK); TO-252 Tape & Reel (TR) TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
rDS(on) 2.1 ohms 1.8 ohms
Unlock Full Specs
to access all available technical data