Dual 20 V N-Channel NexFET™ Power MOSFETs in an 8-pin SON 3.3 × 3.3 mm plastic package with a thermal pad, optimized for 5 V gate drive and suitable for space-constrained applications such as notebook PC and tablet USB input protection. The device has a drain-to-drain on-resistance of 11.7 mΩ at VGS = 4.5 V and 10.3 mΩ at VGS = 8 V, a continuous drain current rating of 12 A, and an avalanche energy single-pulse rating of 72 mJ. It operates from -55 °C to 150 °C, meets RoHS standards, and is Pb-free with halogen-free terminal plating.
Dual 20-V N-Channel NexFET? Power MOSFETs, CSD85312Q3E 8-VSON -55 to 150
Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)
Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)
Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)
Power Field-Effect Transistor, 39A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
20V, N ch NexFET MOSFET™, dual common source SON3x3, 14mOhm 8-VSON -55 to 150 Product overview: CSD85312Q3E from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 14mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 14mOhm, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD85312Q3E can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 806492-CSD85312Q3E
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Supplier Device Package: 8-VSON (3.3x3.3)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 12.4mOhm at 10A, 8V
Gate Charge (Qg) (Maximum) at Vgs: 15.2nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 2390pF at 10V
Current - Continuous Drain (Id) at 25°C: 39A
Vgs(th) (Maximum) at Id: 1.4V at 250μA
MOSFET 2N-CH 20V 39A 8VSON
MOSFET 2N-CH 20V 39A 8VSON
MOSFET Dual 20V N-CH Pwr MOSFETs
| Texas Instruments | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD85312Q3E | 296-37187-2-ND | CSD85312Q3E | 289-CSD85312Q3E | 806492-CSD85312Q3E | CSD85312Q3E | CSD85312Q3E | CSD85312Q3E |
| Product Name | CSD85312Q3E Dual 20-V N-Channel NexFET? Power MOSFETs, CSD85312Q3E | FET, MOSFET Arrays | Dual 20V 14mOhm MOSFET Transistor | FETs - Arrays - CSD85312Q3E | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) Common Source | ||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| rDS(on) | 0.0140 ohms | |||||||
| QG | 11.7 nC | 15.2 nC | ||||||
| Package Type | SON3x3 | 8-PowerVDFN | VSON8 | SOT3 | 8-PowerVDFN |
