Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N04S3-06 IPB80N04S3-06

Manufacturer: Infineon Technologies Win Source Part Number: 068980-IPB80N04S3-06 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 52μA Max Gate Charge: 47nC @ 10V Max Input Capacitance: 3250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.4 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited