P-Channel NexFET? Power MOSFET 4-DSBGA -55 to 150
P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
-20V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 47mOhm 4-DSBGA -55 to 150 Product overview: CSD25213W10 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, 47mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 47mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD25213W10 can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 1.6A 4DSBGA
Manufacturer: Texas Instruments
Win Source Part Number: 1163549-CSD25213W10
Manufacturer Homepage: www.ti.com
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
MOSFET P-CH 20V 1.6A 4DSBGA
| Texas Instruments | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD25213W10 | 296-40004-2-ND | 278-CSD25213W10 | CSD25213W10 | 1163549-CSD25213W10 | CSD25213W10 | CSD25213W10 |
| Product Name | CSD25213W10 P-Channel NexFET? Power MOSFET | Single FETs, MOSFETs | -20V 47mOhm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD25213W10 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| V(BR)DSS | -20 volts | 20 volts | |||||
| rDS(on) | 0.0470 ohms | ||||||
| IDSS | -16000 milliamps | 1600 milliamps | |||||
| QG | 2.2 nC |
