Qorvo DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die QPD2120D

Description
Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2120D typically provides 31 dBm of output power at P1dB with gain of 11 dB and 57% power-added efficiency at 1 dB compression. This performance makes the QPD2120D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant.
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Product
Description
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DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die - QPD2120D - Qorvo
Greensboro, NC, United States
DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
QPD2120D
DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die QPD2120D
Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2120D typically provides 31 dBm of output power at P1dB with gain of 11 dB and 57% power-added efficiency at 1 dB compression. This performance makes the QPD2120D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant.

Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2120D typically provides 31 dBm of output power at P1dB with gain of 11 dB and 57% power-added efficiency at 1 dB compression. This performance makes the QPD2120D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-QPD2120D-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-QPD2120D-ND
RF FETs, MOSFETs 2312-QPD2120D-ND
1.20MM PWR PHEMT

1.20MM PWR PHEMT

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Technical Specifications

  Qorvo DigiKey
Product Category RF Transistors Transistors
Product Number QPD2120D 2312-QPD2120D-ND
Product Name DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die RF FETs, MOSFETs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
Transistor Grade / Operating Range Military
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