Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6784 2N6784

The 2N6784 is a 200V, N-channel HEXFET® power MOSFET in a hermetically sealed TO-205AF (TO-39) package, designed for high-reliability applications such as switching power supplies and pulse circuits. It features repetitive avalanche and dv/dt ratings, with a continuous drain current of 2.25A at 25°C and 1.50A at 100°C, and a maximum power dissipation of 15W. The device has a typical on-resistance of 1.5Ω at 10V gate drive, a single pulse avalanche energy rating of 48mJ, and a peak diode recovery dv/dt of 5.0V/ns. It operates from -55°C to +150°C and meets MIL-PRF-19500/556. The package weighs 0.98g, and thermal resistance from junction to case is 8.33°C/W.