Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0902NS BSC0902NS

Description
Manufacturer: Infineon Technologies Win Source Part Number: 012125-BSC0902NS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Family Name: BSC0902NS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 10mA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): BSC0902NSXT; BSC0902NSATMA1; Introduction Date: December 07, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 012125-BSC0902NS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Family Name: BSC0902NS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 10mA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): BSC0902NSXT; BSC0902NSATMA1; Introduction Date: December 07, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0902NS - 012125-BSC0902NS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0902NS
012125-BSC0902NS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0902NS 012125-BSC0902NS
Manufacturer: Infineon Technologies Win Source Part Number: 012125-BSC0902NS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Family Name: BSC0902NS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 10mA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): BSC0902NSXT; BSC0902NSATMA1; Introduction Date: December 07, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 012125-BSC0902NS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Family Name: BSC0902NS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 23A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 10mA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 1500pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): BSC0902NSXT; BSC0902NSATMA1;
Introduction Date: December 07, 2010
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
30V 100A MOSFET Transistor
2088-BSC0902NS
30V 100A MOSFET Transistor 2088-BSC0902NS
MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS Product overview: BSC0902NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC0902NS can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS Product overview: BSC0902NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC0902NS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistors - BSC0902NS - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSC0902NS
Transistors BSC0902NS
30V 24A 2.5W 2.6mΩ@10V,30A 2.2V@250uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

30V 24A 2.5W 2.6mΩ@10V,30A 2.2V@250uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 012125-BSC0902NS 2088-BSC0902NS BSC0902NS BSC0902NS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0902NS 30V 100A MOSFET Transistor Transistors MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2500 to 48000 milliwatts 48 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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