Automotive qualified N-channel MOSFET in an LFPAK33 package, rated for 40 V drain-source voltage and 5.0 mΩ drain-source on-state resistance at 25 °C. Capable of 85 A continuous drain current at 25 °C mounting base temperature with 83 W total power dissipation. Features Trench 9 superjunction technology and copper clip packaging for high power density and reliability. Fully qualified to AEC-Q101 at 175 °C junction temperature, with repetitive avalanche rating and gull wing leads for high manufacturability.
Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
Features and benefits
Applications
N-Channel 40V 85A (Tj) 83W Surface Mount LFPAK33
N-Channel 40V 85A (Tj) 83W Surface Mount LFPAK33
N-Channel 40V 85A (Tj) 83W Surface Mount LFPAK33
MOSFET, N-CH, 40V, 85A, 175DEG C, 83W ROHS COMPLIANT: YES
MOSFET N-CH 40V 85A LFPAK33
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK7M5R0-40HX | 1727-BUK7M5R0-40HXTR-ND | 66AH9421 | BUK7M5R0-40HX |
| Product Name | N-channel 40 V, 5.0 mOhm standard level MOSFET in LFPAK33 | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 85A, 175Deg C, 83W Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 40 volts | |||
| IDSS | 85000 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 83 milliwatts |
