Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 112F E6327

Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 250mW Surface Mount PG-TSFP-3
  • Single, Pre-Biased Bipolar Transistors - BCR112FE6327-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 250mW Surface Mount PG-TSFP-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - BCR112FE6327-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
BCR112FE6327-ND
Single, Pre-Biased Bipolar Transistors BCR112FE6327-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 250mW Surface Mount PG-TSFP-3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 250mW Surface Mount PG-TSFP-3

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Transistors
Product Number BCR112FE6327-ND
Product Name Single, Pre-Biased Bipolar Transistors
Polarity NPN
Unlock Full Specs
to access all available technical data

Similar Products

PNP general-purpose transistor - 2PA1576Q,115 - Nexperia B.V.
Nexperia B.V.
PNP general-purpose transistor
2PA1576Q,115
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
4 suppliers
Transistor - 436156 - Radwell International
Fuji Electric Corp. of America
Transistor
6DI10A-050
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor - TGF2929-FL - Qorvo
Qorvo
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor
TGF2929-FL
Specs
Transistor Technology / Material GaN
Package Type NI-360
View Details
4 suppliers