The 2N6786 is a hermetically sealed, N-channel MOSFET transistor in a TO-205AF package, rated for 400V drain-to-source voltage and 1.25A continuous drain current at 25°C case temperature. It features repetitive avalanche and dv/dt rating capabilities, with a maximum on-state resistance of 3.6Ω at VGS = 10V and ID = 0.80A, and a junction temperature range of -55°C to 150°C. The device meets MIL-PRF-19500/556 standards and is designed for high-reliability applications including switching power supplies, motor controls, and high-energy pulse circuits. Weight is 0.98g typical. Thermal resistance is 8.3°C/W junction-to-case and 175°C/W junction-to-ambient with a typical socket mount.
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | 2N6786 |
| Polarity | N-Channel |
