The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and CW operations.
ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
450W, 50V, 1.2-1.4GHZ, GAN IMFET
RF JFET Transistors 450W 50V 1.2-1.4GHz GaN IMFET
| Qorvo | DigiKey | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | Transistors |
| Product Number | QPD1006 | 2312-QPD1006-ND | QPD1006 |
| Product Name | 450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET | RF FETs, MOSFETs | RF JFET Transistors |
| Transistor Type | IMFET | JFET | |
| Transistor Technology / Material | 450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET | ||
| Transistor Grade / Operating Range | Military |
