Infineon Technologies AG Power - Gate Driver ICs - 2EDR8259H 2EDR8259H

Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing The EiceDRIVER™ 2EDR8259H is a reinforced isolated gate driver IC for control over the mandatory safe isolation barrier in SMPS. The strong 5 A/9 A source/sink dual-channel gate driver comes with a very high 150 V/ns CMTI (common mode transient immunity) for robust operation with CoolMOS™, CoolGaN™ GIT HEMTs and high-power switching noise environment. The very short propagation delay of 38ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. Safety certificates in accordance with UL1577, VDE0884-11, IEC 60747-17, IEC62368 and GB4943.1 are available. 2EDR8259H is available in a wide-body 300 mil DSO-16 package. Summary of Features up to 8000 Vpk VIOTM robust input-to-output isolation meeting the latest components standards (IEC60747-17) Available system standards certificates (EN 62368-1, GB4943.1) Channel-to-channel isolation Accurate timings High CMTI (common mode rejection) > 150 V/ns < 2 µs fast UVLO start-up time Fast active clamping of the output for supply below UVLO Optional Dead-time control and shoot-through protection (DTC/STP) 16-pin package with increased channel-to-channel creepage Benefits System safe isolation Simplified system safety approval Flexible driving (driving of two floating switches at different source potentials, driving of 4-pin kelvin source MOSFETs) or simply robustness against ground bounce in noisy environments Perfect signal synchronization for increased system efficiency Reliable system operation at high switching frequencies and driving of WBG (wide bandgap) devices Symmetrical operation in bootstrapped system with benefit on system reliability (reduced risk of saturation of the main transformer or hard commutation in LLC) Enabling safe operation in bootstrapped system during start-up Protection against input overlap in case of noisy conditions as output short circuits Operation at higher bus voltages or in worst pollution degree environments Potential Applications Server, telecom, SMPS EV Off-board chargers Solar micro inverter, solar optimizer Industrial power supply (SMPS, Residential UPS) Applications 48 V intermediate bus converter (IBC) DIN rail power supplies LED lighting system designs Telecommunication infrastructure Designers who used this product also designed with IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes BSC520N15NS3 G | N-Channel Power MOSFET IPW60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes BSC520N15NS3 G | N-Channel Power MOSFET IPW60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes BSC520N15NS3 G | N-Channel Power MOSFET 1 2