Infineon Technologies AG Power - Gate Driver ICs - 2EDL5023U2D 2EDL5023U2D

Description
Drive both high-side and low-side logic level MOSFETs in a half-bridge configuration. 120 V bootstrap voltage with integrated bootstrap diode and an active bootstrap clamp mechanism to avoid bootstrap capacitor overcharge during deadtime. with TTL logic compatible inputs and split outputs to provide flexibility in adjusting the turn-on and turn-off strength independently and an active miller clamp is implemented to avoid induced turn-on. Summary of Features Integrated 120 V bootstrap switch Low propagation delay and delay matching Strong 7 A active miller clamp Strong current capability Small 2x2 mm TSNP package Benefits No need for external bootstrap diode Fast switshing transition Higher efficiency Higher power density Induced turn-on immunity Potential Applications Telecom Server DC DC converter
Request a Quote Datasheet
Description
Drive both high-side and low-side logic level MOSFETs in a half-bridge configuration. 120 V bootstrap voltage with integrated bootstrap diode and an active bootstrap clamp mechanism to avoid bootstrap capacitor overcharge during deadtime. with TTL logic compatible inputs and split outputs to provide flexibility in adjusting the turn-on and turn-off strength independently and an active miller clamp is implemented to avoid induced turn-on. Summary of Features Integrated 120 V bootstrap switch Low propagation delay and delay matching Strong 7 A active miller clamp Strong current capability Small 2x2 mm TSNP package Benefits No need for external bootstrap diode Fast switshing transition Higher efficiency Higher power density Induced turn-on immunity Potential Applications Telecom Server DC DC converter
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
Power - Gate Driver ICs - 2EDL5023U2D - 2EDL5023U2D - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2EDL5023U2D
2EDL5023U2D
Power - Gate Driver ICs - 2EDL5023U2D 2EDL5023U2D
Drive both high-side and low-side logic level MOSFETs in a half-bridge configuration. 120 V bootstrap voltage with integrated bootstrap diode and an active bootstrap clamp mechanism to avoid bootstrap capacitor overcharge during deadtime. with TTL logic compatible inputs and split outputs to provide flexibility in adjusting the turn-on and turn-off strength independently and an active miller clamp is implemented to avoid induced turn-on. Summary of Features Integrated 120 V bootstrap switch Low propagation delay and delay matching Strong 7 A active miller clamp Strong current capability Small 2x2 mm TSNP package Benefits No need for external bootstrap diode Fast switshing transition Higher efficiency Higher power density Induced turn-on immunity Potential Applications Telecom Server DC DC converter

Drive both high-side and low-side logic level MOSFETs in a half-bridge configuration. 120 V bootstrap voltage with integrated bootstrap diode and an active bootstrap clamp mechanism to avoid bootstrap capacitor overcharge during deadtime. with TTL logic compatible inputs and split outputs to provide flexibility in adjusting the turn-on and turn-off strength independently and an active miller clamp is implemented to avoid induced turn-on.


Summary of Features

  • Integrated 120 V bootstrap switch
  • Low propagation delay and delay matching
  • Strong 7 A active miller clamp
  • Strong current capability
  • Small 2x2 mm TSNP package

Benefits

  • No need for external bootstrap diode
  • Fast switshing transition
  • Higher efficiency
  • Higher power density
  • Induced turn-on immunity

Potential Applications

  • Telecom
  • Server
  • DC DC converter
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDL5023U2D
Product Name Power - Gate Driver ICs - 2EDL5023U2D
Driver Type High-side; Low-side
Output Current 3 amps
Supply Voltage 4.5 to 5.5 volts
Propagation Delay 20 ns
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