Wolfspeed Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode CPM3-1200V-0013A

Description
This new device achieves a remarkable 13mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in automotive drive-trains, motor drives, solid-state circuit breakers and resonant topologies. Features C3M SiC MOSFET technlogy High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up High gate resistance for drivers
  • Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - CPM3-1200V-0013A - Wolfspeed
    Wolfspeed
Description
This new device achieves a remarkable 13mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in automotive drive-trains, motor drives, solid-state circuit breakers and resonant topologies. Features C3M SiC MOSFET technlogy High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up High gate resistance for drivers

Suppliers

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Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - CPM3-1200V-0013A - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
CPM3-1200V-0013A
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode CPM3-1200V-0013A
This new device achieves a remarkable 13mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in automotive drive-trains, motor drives, solid-state circuit breakers and resonant topologies. Features C3M SiC MOSFET technlogy High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up High gate resistance for drivers

This new device achieves a remarkable 13mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in automotive drive-trains, motor drives, solid-state circuit breakers and resonant topologies.

Features

  • C3M SiC MOSFET technlogy
  • High blocking voltage with low RDS(on)
  • Easy to parallel and simple to drive
  • Resistant to latch-up
  • High gate resistance for drivers
Supplier's Site

Technical Specifications

  Wolfspeed
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CPM3-1200V-0013A
Product Name Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Transistor Technology / Material Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
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