Wolfspeed Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode CPM3-1200V-0013A

This new device achieves a remarkable 13mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied in automotive drive-trains, motor drives, solid-state circuit breakers and resonant topologies. Features C3M SiC MOSFET technlogy High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up High gate resistance for drivers