Richardson RFPD RF Power Transistor D2203UK

The D2203UK is a metal gate RF silicon FET designed for broadband VHF/UHF communications from 1 MHz to 1 GHz. It features a dual-drain, dual-gate package with dimensions of 16.38 mm by 14.22 mm and includes a metal flange for thermal mounting. The device supports a maximum power dissipation of 35 W and a junction temperature up to 200°C. It provides minimum 10 dB common source power gain and 40% drain efficiency at 12.5 V and 0.2 A. Electrical characteristics include a drain-source breakdown voltage of 40 V, gate-source breakdown voltage of ±20 V, and input, output, and reverse transfer capacitances of 12 pF, 10 pF, and 1 pF respectively at 1 MHz. The part is RoHS compliant and contains beryllium oxide in the ceramic portion, requiring careful handling. Thermal resistance from junction to case is 5.0°C/W.