Richardson RFPD RF Power Transistor PH1214-12M

Description
Radar Power Transistors
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Description
Radar Power Transistors
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Datasheet
Datasheet Summary
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PH1214-12M is a radar pulsed power transistor designed for 1.2-1.4 GHz operation with 12 W output power under 150 µs pulses at 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device operates with a collector-emitter voltage of 70 V, peak collector current of 1.3 A, and thermal resistance of 3.7 °C/W. It achieves 45% collector efficiency and 8.5 dB power gain at 28 V supply. The transistor is RoHS compliant and rated for junction temperatures up to 200 °C.

Datasheet Summary
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PH1214-12M is a radar pulsed power transistor designed for 1.2-1.4 GHz operation with 12 W output power under 150 µs pulses at 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device operates with a collector-emitter voltage of 70 V, peak collector current of 1.3 A, and thermal resistance of 3.7 °C/W. It achieves 45% collector efficiency and 8.5 dB power gain at 28 V supply. The transistor is RoHS compliant and rated for junction temperatures up to 200 °C.

Suppliers

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Product
Description
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RF Power Transistor - PH1214-12M - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH1214-12M
RF Power Transistor PH1214-12M
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number PH1214-12M
Product Name RF Power Transistor
Package Type Ceramic Flanged
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