The DMD1028 is a 300W, 28V, 175MHz RF silicon FET designed for VHF/UHF communications and broadband applications, housed in a metal package with dimensions of 15.24 mm by 10.80 mm by 27.94 mm. It features a thermal resistance of 0.2°C/W from junction to case, a minimum power gain of 16 dB, and a drain efficiency of 60% at 28V and 2A quiescent current. The device is RoHS compliant, BeO-free, and has a maximum operating junction temperature of 200°C. The drain-source breakdown voltage is 70V, with a gate-source breakdown voltage of ±20V and a maximum drain current of 30A per side.
New Product! BeO-free package, only 0.2 0C/W thermal resistance. 300W, 16dB gain @ 175MHz
| Richardson RFPD | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | DMD1028 |
| Product Name | RF Power Transistor |
| Output Power | 300 watts |
