Richardson RFPD RF Power Transistor D2019UK

The D2019UK is a silicon DMOS RF FET in an SO8 package, measuring 4.06 mm by 5.08 mm by 1.27 mm, designed for broadband RF power amplification from 1 MHz to 2 GHz. It offers a minimum gain of 13 dB, operates at up to 28 V drain voltage with a 2.5 W output power, and supports a drain current of 1 A. The device has a maximum junction temperature of 200°C and a thermal resistance of 10°C/W. It features low input capacitance (12 pF), low output capacitance (6 pF), and low reverse transfer capacitance (0.5 pF), with a VSWR load mismatch tolerance of 20:1 at 1 GHz. The part is RoHS compliant and uses gold metallization.