Richardson RFPD RF Power Transistor DU1215S

DU1215S is an N-channel enhancement mode RF power MOSFET transistor designed for 12 V applications with a broadband operating frequency range of 2 to 175 MHz and a saturated output power of 15 W. It features a DMOS structure, low capacitances for broadband performance, and a drain efficiency of 60% at 175 MHz. The device is packaged in a leaded format with dimensions of 24.64 to 24.89 mm in length, 18.29 to 18.54 mm in width, and 20.07 to 20.83 mm in height. It has a maximum drain-source voltage of 40 V, a gate-source voltage of 20 V, and a power dissipation of 87.5 W. The junction temperature operates up to 200 °C with a thermal resistance of 2 °C/W. It is RoHS compliant.