Richardson RFPD RF Power Transistor D5001UK

The D5001UK is a metal gate RF silicon FET designed for HF/VHF communications from 1 MHz to 175 MHz. It is housed in a four-terminal metal package measuring 24.76 mm by 18.42 mm with a 6.35 mm lead diameter. The device has a maximum power dissipation of 50 W, a drain-source breakdown voltage of 125 V, and a maximum junction temperature of 200°C. It provides a minimum common source power gain of 16 dB and drain efficiency of 50% at 50 V drain voltage and 0.1 A quiescent current. Input and output capacitances are 60 pF and 25 pF respectively at 1 MHz. Thermal resistance from junction to case is 3.5°C/W. The ceramic portion contains beryllium oxide, requiring careful handling. The device is RoHS compliant and gold metallized.