Richardson RFPD RF Power Transistor D2219UK

D2219UK is a silicon RF MOSFET in an SO8 package measuring 4.06 mm by 5.08 mm, designed for single-ended RF amplification from 1 MHz to 1 GHz. It provides a minimum gain of 10 dB at 1 GHz under 2.5 W output power and 12.5 V drain bias, with 40% drain efficiency. The device supports input and output capacitances of 12 pF and 10 pF respectively at 1 MHz, and handles a maximum drain current of 2 A and power dissipation of 17.5 W. It features a drain-source breakdown voltage of 40 V and gate-source breakdown voltage of ±20 V, with a maximum junction temperature of 200°C and thermal resistance of 10°C/W. The part is RoHS compliant and gold metallised for reliable surface-mount mounting in HF/VHF/UHF communication systems.