Richardson RFPD RF Power Transistor D5002UK

The D5002UK is a metal gate RF silicon FET designed for broad band applications from 1 MHz to 175 MHz, with a minimum gain of 16 dB and 40 W output power at 50 V. It is housed in a ceramic package with a metal flange, measuring 24.76 mm by 18.42 mm, and features a pinout with source, drain, and gate terminals. Absolute maximum ratings include a drain-source breakdown voltage of 125 V, gate-source breakdown voltage of ±20 V, and a maximum junction temperature of 200°C. Thermal resistance from junction to case is 2.0°C/W. The device is RoHS compliant but contains beryllium oxide in the ceramic insulator. It is suitable for HF/VHF communications and operates with a 20:1 VSWR load mismatch tolerance at 175 MHz.