Richardson RFPD RF Power Transistor D2021UK

The D2021UK is a silicon RF DMOS field-effect transistor designed for VHF/UHF communications applications from DC to 1 GHz. It is packaged in an SO8 case measuring 5.08 mm by 4.06 mm with a height of 1.27 mm. The device supports a maximum drain-source voltage of 65 V, a gate-source voltage of ±20 V, and a continuous drain current of 3 A. Power dissipation is rated at 35 W with a maximum junction temperature of 200°C. It provides minimum gain of 13 dB at 1 GHz and 40% drain efficiency at 28 V and 0.3 A bias. Input and output capacitances are 36 pF and 18 pF respectively at 1 MHz. The part is RoHS compliant and features low reverse transfer capacitance and low noise. Thermal resistance from junction to case is 5°C/W.