Richardson RFPD RF Power Transistor D1023UK

The D1023UK is a metal gate RF silicon FET designed for HF/VHF communications from 1 MHz to 175 MHz. It features a hermetic metal package with gold metallization, measuring 6.35 mm in diameter and 18.41 mm in height. The device supports a maximum drain-source voltage of 70 V, a power dissipation of 117 W, and a maximum junction temperature of 200°C. It provides a minimum gain of 16 dB at 175 MHz with 50% drain efficiency at 60 W output power across a 20:1 load mismatch. The input capacitance is 180 pF and output capacitance is 90 pF at 1 MHz. Thermal resistance from junction to case is 1.5°C/W. The ceramic section contains beryllium oxide, requiring careful handling to avoid dust exposure.