Richardson RFPD RF Power Transistor D1017UK

The D1017UK is a single-ended RF silicon MOSFET designed for HF/VHF/UHF communications applications up to 200 MHz, delivering 150 W output power at 28 V and 175 MHz with a minimum gain of 13 dB. It is housed in a four-terminal metal package measuring 24.76 mm by 18.42 mm with a 6.35 mm diameter center pin, and includes a conductive flange for thermal mounting. The device supports a maximum junction temperature of 200°C, dissipates up to 220 W, and tolerates a 20:1 VSWR load mismatch. Electrical characteristics include a gate-source breakdown voltage of ±20 V, a drain current rating of 30 A, and thermal resistance from junction to case of 0.8°C/W. The ceramic substrate between leads and flange contains beryllium oxide, requiring careful handling to avoid dust exposure. The part is RoHS compliant and features gold metallization.