Richardson RFPD RF Power Transistor D1014UK

The D1014UK is a silicon DMOS RF field-effect transistor designed for broadband amplifier applications from 1 MHz to 500 MHz, with useful performance up to 1 GHz. It is housed in a metal case with dimensions of 16.51 mm × 6.35 mm × 45.00 mm and features a gold metallized finish. The device supports a maximum drain-source voltage of 70 V, a drain current of 10 A, and a maximum power dissipation of 87.5 W. It delivers a minimum gain of 12 dB at 500 MHz and a drain efficiency of 50% at 40 W output. Thermal resistance from junction to case is 2.0°C/W. The part is RoHS compliant and includes a beryllium oxide ceramic insulator requiring careful handling. It meets the AEC-Q200 qualification standard.