Richardson RFPD RF Power Transistor D1012UK

The D1012UK is a metal gate RF silicon FET designed for HF/VHF/UHF communications from 1 MHz to 500 MHz, capable of 100W output at 28V. It features a push-pull configuration with two drain terminals and two gate terminals, mounted in a case measuring 13.97 mm by 5.72 mm by 30.48 mm, with a maximum thermal resistance of 0.6°C/W. The device has a drain-source breakdown voltage of 70V, a maximum drain current of 15A per side, and operates at a maximum junction temperature of 200°C. It provides a minimum power gain of 10 dB, 50% drain efficiency at 1.2A quiescent current, and a load mismatch tolerance up to 20:1 at 500 MHz. The part is RoHS compliant and contains beryllium oxide in its ceramic interface, requiring careful handling. Input capacitance is 180 pF, output capacitance is 90 pF, and reverse transfer capacitance is 7.5 pF at 1 MHz.