Richardson RFPD RF Power Transistor D1001UK

The D1001UK is a metal gate RF silicon FET designed for amplified applications from 1 MHz to 175 MHz, featuring a minimum gain of 16 dB and drain efficiency up to 50%. It is housed in a single-ended package with dimensions of 24.76 mm by 18.42 mm and includes a metal flange for heat dissipation. The device supports a maximum drain-source voltage of 70 V, gate-source voltage of ±20 V, and continuous drain current of 5 A, with a maximum power dissipation of 50 W and junction operating temperature up to 200°C. Thermal resistance from junction to case is 3.5°C/W. Input and output capacitances are 60 pF and 30 pF respectively at 1 MHz. The component includes a beryllium oxide ceramic insulator requiring careful handling to avoid toxic dust exposure. It is RoHS compliant and gold metallised.